Observation reveals enhanced spin current generation in non-collinear antiferromagnetic structures, indicating new paths for energy-efficient spintronic devices.
The spin Hall effect (SHE) is a key mechanism for the generation of spin currents, driving the advancement of energy‐efficient spintronic devices. Spin current generation is influenced by multiple factors, making it challenging to distinguish the role of magnetization from structural factors. Therefore, the coexistence of diverse magnetic structures within the same crystal structure and atomic composition provides an ideal platform for such an investigation. In this work, a novel magnetic structure‐dependent spin Hall effect is demonstrated in Mn 5 Si 3 , which features both collinear and non‐collinear antiferromagnetic structures with the same crystal structure. Our findings reveal a significant enhancement in the spin Hall angle during the transition from collinear to non‐collinear antiferromagnetic structures, originating from the enhanced spin‐orbit coupling induced by the non‐collinear antiferromagnetic order in Mn 5 Si 3 . Furthermore, based on this magnetic structure‐dependent spin Hall effect, the efficiency of spin‐orbit torque switching of perpendicular magnetization is enhanced in the non‐collinear phase compared to the collinear one. This study advances the controllable spin sources and provides valuable insights into the construction of energy‐efficient spintronic devices.
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Zhu et al. (2025) studied this question.
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