Highly stable memory performance of PMMA-ZnO NPs hybrid nanocomposite-based ReRAM

Two-terminal memories with a metal-insulator-metal (MIM) sandwich architecture are promising candidates for the next generation of non-volatile memory technologies. Nanostructured hybrid nanocomposites have gained significant interest due to their inexpensive manufacturing costs and exceptional scalability. In this work, we report Resistive random-access memory (ReRAM) devices based on hybrid networks of PMMA-ZnO NPs with varying ZnO NPs (wt.%) concentrations deposited on ITO-coated quartz glass substrates via the sol-gel spin-coating technique. The fabricated Al/PMMA-ZnO NPs/ITO devices exhibited bipolar hysteresis curves. It has been observed that the device with 7 wt% ZnO NPs exhibited a high LRS/HRS ratio of 1 × 104 with excellent data retention stability (1000 h) and endurance (1 × 104 switching cycles). The double-logarithmic I-V curve, fitted with theoretical conduction models, shows that charge transport in the device is mainly governed by ohmic conduction and Schottky emission during the SET process. In contrast, ohmic conduction and Fowler-Nordheim tunnelling were the dominant charge-transport mechanisms during the RESET process. Furthermore, the energy band and the filament formation model were proposed to explain the switching mechanism. These findings highlight the potential of PMMA-ZnO NPs hybrid nanocomposites for enabling more efficient, scalable, and cost-effective non-volatile storage solutions.