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This circuit demonstrates low power performance with 170 nA quiescent current in energy harvesting applications, highlighting its robustness against temperature and process variation.
This work presents an ultra-low-power on-chip energy management (EM) circuit, which is the most critical and power-intensive block in power management integrated circuits (PMICs) used for energy harvesting (EH) applications. Ultra-low power consumption was the primary design priority to ensure suitability for systems operating under strict energy limitations. The design relies on a compact latch-based core and avoids the need for extra circuits such as voltage references, comparators, or logic blocks, which helps reduce both area and power. To implement the required high resistance, a series of diode-connected zero-threshold NMOS transistors is used. This approach enables very high resistance in a compact area without additional power consumption or biasing issues at low voltages. A PMOS transistor is also integrated at the EM output to directly control different types of loads. The circuit was designed and fabricated using a 65 nm CMOS standard process. Experimental measurements from the fabricated chips show a quiescent current of 170 nA at 3 V and a voltage hysteresis of over 0.9 V. In addition, temperature and process variation were simulated to verify robust operation. These results confirm that the circuit operates reliably under ultra-low-power conditions and is well-suited for EH systems.
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Shahabi et al. (2025) studied this question.
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