Work demonstrates improved resistive switching and non-volatile memory in W-doped molybdenum oxide devices, highlighting potential for ReRAM applications.
Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 104 s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoOx/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices.
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Kalemai et al. (2025) studied this question.
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