Thermal recovery of radiation-induced structural and electronic degradation in β-SiC nanopowders

The structural and electronic recovery of β-SiC nanopowders after gamma irradiation was investigated through post-irradiation thermal annealing. Gamma exposure induced significant lattice disorder, peak broadening, and reduced carrier mobility, evidencing radiation-driven degradation. Subsequent annealing at 1100 °C partially restored crystallinity and improved transport properties, as confirmed by XRD, FTIR, DRS, FESEM, and Hall effect analyses. The results reveal that thermal energy promotes defect recombination and grain growth, enabling partial reversal of radiation damage. The irradiated samples exhibited enhanced recovery compared to pristine powders, demonstrating the combined impact of pre-existing defects and annealing on defect dynamics. Although full restoration was not achieved, the findings highlight thermal annealing as an effective strategy to improve the stability of radiation-damaged SiC. This study advances understanding of defect recovery in wide-bandgap ceramics and outlines a practical route to tailoring their performance in radiation-intensive and high-temperature environments relevant to nuclear and space applications.