Investigation reveals high kinetic inductance in thin films of tantalum carbonitride, suggesting enhanced superconducting circuit performance.
The promise of tantalum for realizing superconducting quantum devices has generated interest in its compound films, particularly nitrides. Among these, cubic-phase tantalum carbonitride (TaCxN1−x) offers reduced susceptibility to oxidation and a high critical temperature, yet its microwave properties remain largely unexplored. Here, we investigate plasma-enhanced atomic layer deposition of cubic-phase TaCxN1−x thin films for superconducting microwave circuits. Structural and transport measurements reveal nanocrystalline morphology with sub-10 nm grains and superconductivity in the dirty limit. Coplanar waveguide resonators exhibit moderately high kinetic inductance (16.8 pH/sq for 30 nm films) with potential for enhancement through dimensional scaling. The films also support high internal quality factors exceeding 105 at 50 mK in the single-photon regime, comparable to granular aluminum. Loss analysis identifies the two-level systems as the dominant limiting mechanism, with potential for further reduction through interface engineering. These results establish atomic layer deposited TaCxN1−x as a promising material for scalable, low-loss, high-inductance superconducting circuits.
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Shiravand et al. (2025) studied this question.
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