This letter demonstrates a temperature-compensated low-noise amplifier performance with gain stability across a wide temperature range, suggesting improvements in RF applications.
This letter presents a 2–17 GHz low‐noise amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) with a temperature compensation circuit, implemented in a GaAs depletion‐mode (D‐mode) process using a single power supply. A temperature‐compensated bias circuit using a source diode is introduced, followed by a negative feedback circuit to extend the bandwidth. The design employs a single power supply for enhanced practicality. Measured results show a gain exceeding 14 dB, a noise figure (NF) below 3 dB, and input/output return losses greater than 10 dB. The gain variation remains within ±0.001524 dB/°C from −55°C to +125°C. This LNA exhibits ultra‐wideband performance and excellent gain stability across a wide temperature range.
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Jiang et al. (2025) studied this question.
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