A 92.9 ~ 100 GHz SiGe BiCMOS Colpitts VCO With Optimal Capacitance Ratio Technique

This letter presents a W‐band Colpitts voltage‐controlled oscillator (VCO) designed in a 130 nm SiGe BiCMOS process. The proposed VCO employs a push‐push harmonic extraction topology to generate the second harmonic output, while a novel optimal capacitance ratio technique is used to minimize the phase noise over the entire tuning range. The output frequency range of this VCO is 92.9 ~ 100.0 GHz, with a phase noise of −90.53 dBc/Hz at a 1 MHz frequency offset. The supply voltage is 2.5 V, and the power consumption of the VCO core and buffer is 80 mW and 32.5 mW, respectively. The chip area of this VCO is 0.438 mm².