January 1, 2025Радиотехника и электроника / Journal of Communications Technology and ElectronicsOpen Access

(111)A-, (411)A-ORIENTED SUBSTRATES EFFICIENCY FOR LOW-TEMPERATURE EPITAXIAL GROWTH OF (In,Ga)As PHOTOCONDUCTIVE STRUCTURES USED IN TERAHERTZ PULSES GENERATION

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Research demonstrates low-temperature epitaxial growth boosts terahertz efficiency in (In,Ga)As, suggesting advantages of non-standard substrates.

Terahertz generation efficiency improved by low-temperature epitaxial growth on (111)A and (411)A substrates.
Films grown on non-standard substrates show saturated extended defects but outperform standard (100) surface structures.
Epitaxial growth methods for (In,Ga)As structures utilized femtosecond optical pulses for terahertz oscillation generation.
Highlights the potential of using polycrystalline films with defect structures for enhanced electronic properties.

G. B. Galiev (2025) studied this question.

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Research demonstrates low-temperature epitaxial growth boosts terahertz efficiency in (In,Ga)As, suggesting advantages of non-standard substrates.