A 18‐36 GHz Noise Cancelling Low‐Noise Amplifier With 2.9 dB NF in 130 nm SiGe BiCMOS

This paper presents a broadband noise cancelling low‐noise amplifier (LNA) implemented using a 130‐nm SiGe BiCMOS process. The first stage employs a parallel architecture, combining a common‐base amplifier with a resistive feedback common‐emitter amplifier, to achieve noise cancellation. This is accomplished by canceling the in‐phase noise signals through two paths while combining the out‐of‐phase signals via an asymmetric network. The second stage utilizes a differential common‐emitter topology with bandwidth‐extending coupling inductors. The measured results show a peak gain of 21.4 dB at 21 GHz and a minimum noise figure (NF) of 2.9 dB at 26 GHz. The 3‐dB bandwidth is 18 GHz, and the input 1‐dB compression point is better than −15 dBm. This combination of performance metrics makes the proposed LNA a highly competitive candidate for K‐ and Ka‐band systems.