Findings show quantum anomalous Hall effect occurs in ferromagnetic monolayer at 1.0 hole doping, suggesting implications for spintronics.
The QAHE, characterized by Chern number C = 2, can be attained in tensile-strained monolayer NiAl 2 Se 4 when the hole-doping concentration is 1.0 holes per unit cell. This is promising for the experimental exploration of topological spintronics.
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Yin et al. (2025) studied this question.
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