ATOMIC LAYER DEPOSITION AlMoO OF FILMS USING ALUMINUM TRICHLORIDE OR TRIMETHYLALUMINIUM AND QUANTUM CHEMICAL CALCULATIONS OF GROWTH, REDUCTION AND CONVERSION PROCESSES

A comparative analysis of the surface processes of atomic layer deposition (ALD) of AlMoO using HO, molybdenum (VI) oxydichloride (MoOCl), trimethylaluminium (Al(CH), TMA) or aluminum chloride (AlCl) was carried out. The difference between AlMoO's ALD processes was the use of TMA or AlCl as an aluminum precursor. XPS analysis of the deposited films revealed that the molybdenum content was lower than the aluminum content. Molybdenum in the oxidation state of Mo and reduced forms of molybdenum (Mo and Mo) were also found in the films; the ratio of the atomic concentration of Mo+6 to Mo and Mo+4 in the case of the TMA process was 0.76 : 1, and in the case of AlCl — 6.3 : 1. The replacement of TMA with AlCl in the AlMoO ALD process has significantly reduced the amount of reduced Mo in films. To evaluate the thermodynamic parameters of film growth reactions, molybdenum reduction, and MoO to AlO conversion for ALD using AlCl and TMA, quantum chemical calculations using the DFT method were performed. According to the calculated data, AlMoO ALD using TMA is more thermodynamically advantageous in comparison with AlCl3 due to the greater reactivity of TMA.