Experimental analysis showed increased open circuit voltage and stability in low-cost metal oxide-based solar cells using Al-doped NiOx as hole transport layer.
In order to achieve low cost and high stability metal oxide-based inverted planar perovskite solar cells (IPSCs), we designed Al-doped NiOx (ANO) films as the hole transport layer (HTL) to prepare a solar cell with ITO/ANO/CsPbBr3/ZnO/carbon structure. The results showed that compared to the pristine NiOx film, ANO-8 (8% Al doping) film could not only provide higher conductivity and carrier mobility, but also form a good interfacial band alignment with the CsPbBr3 perovskite layer. Additionally, a better crystallization quality and larger grain size of CsPbBr3 films could be obtained on the ANO-8 HTL. Therefore, the champion efficiency based on this optimization strategy reached 6.72%, where the open circuit voltage (Voc) was 1.33 V and the short circuit current (Jsc) was 8.11 mA/cm2. After 28 days, the photoelectric conversion efficiency still retained 96.73% of the original efficiency in an air environment with 80% relative humidity and temperature of 25 °C, demonstrating considerable stability. These results provide a promising approach for achieving stable and reliable IPSCs with low-cost inorganic HTLs.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: