December 4, 2025Advanced Optical Materials

In Situ Selenization‐Engineered PtSe ₂ /PdSe ₂ Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission

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Peak responsivity of 1.232 A W −1 at 532 nm highlights device efficiency in photodetection,
Specific detectivity of 9.82 × 10 9 Jones at 1310 nm confirms high performance for infrared applications.
Observational analysis employing reactive ion etching controls thickness in PtSe2 layers, enhancing carrier behavior.
Supports the potential for scalable, polarization-resolved sensors in advanced infrared imaging.

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Implication

This work demonstrates enhanced photodetection and information transmission in van der Waals heterostructures, implying advanced infrared imaging applications.

Cite This Study

Kang et al. (2025) studied this question.

synapsesocial.com/papers/6930dc6bea1aef094cca1e68 https://doi.org/10.1002/adom.202502967

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Implication

This work demonstrates enhanced photodetection and information transmission in van der Waals heterostructures, implying advanced infrared imaging applications.

In Situ Selenization‐Engineered PtSe ₂ /PdSe ₂ Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission

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Discussion

Implication

Cite This Study

In Situ Selenization‐Engineered PtSe ₂ /PdSe ₂ Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission

Key Points

Discussion

Implication

Cite This Study

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