Hybrid sputtering approach for reliable TOF-SIMS depth profiling of inorganic–organic multilayer films

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) combined with argon gas cluster ion beam (Ar-GCIB) enables low-damage, high-resolution depth profiling of organic materials. However, Ar-GCIB exhibits an intrinsically low sputtering yield for inorganic materials, limiting its applicability to organic–inorganic multilayer systems. Such hybrid multilayers are increasingly used in optics and electronics, including antireflection coatings, perovskite solar cells, and polymer-electrolyte fuel cells. Accurate depth profiling at organic–inorganic interfaces is crucial for evaluating device performance and reliability but remains technically challenging. In this study, we introduce a hybrid sputtering approach that combines low-energy monoatomic Cs+ ions with Ar-GCIB to achieve reliable depth profiling of organic–inorganic multilayer films. The addition of Cs+ ions improved the sputtering yield for inorganic layers while preserving the secondary ion signal from organic components. By optimizing the relative beam ratio of Ar-GCIB and Cs+, we successfully achieved high-resolution depth profiling of hybrid multilayers. This approach enables practical TOF-SIMS depth profiling of complex hybrid materials with improved accuracy and interface characterization.