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Study demonstrates enhanced quantum yield and CPL performance in chiral materials, suggesting a pathway for advanced optoelectronic devices.
Circularly polarized luminescence (CPL) materials hold significant promise in advanced optoelectronics. However, it still remains challenging to obtain chiral metal halides with simultaneously a large luminescence dissymmetry factor ( g lum ) and high photoluminescence quantum yield (PLQY). Inspired by the intriguing luminescence properties of heterometallic‐doping complexes, we successfully synthesized chiral indium‐antimony halide hybrids, ( R / S ‐MPZ) 2 In 1‐x Sb x Cl 7 ( R / S ‐1 ) (MPZ = 2‐Methylpiperazine, x ≈ 0.02), where the alloying of Sb 3+ ions significantly enhances PLQY and optimizes the distortion of metal halide octahedra, thereby synergistically improving the g lum . As a result, R ‐1 exhibits excellent CPL performance with PLQY and | g lum | values up to 98.2% and 0.1, respectively. The high figure of merit of 9.82 × 10 −2 significantly surpasses those of the reported indium‐based CPL materials. Furthermore, the resulting circularly polarized light‐emitting diode exhibits a high | g lum | value of 9.3 × 10 −3 , being superior to most reported CPL‐active materials. This work provides a robust strategy for addressing the synergistic enhancement between g lum and PLQY in CPL systems, offering a high‐performance polarized light source for quantum communication and optical encryption.
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Chen et al. (2025) studied this question.
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