Demonstrates phase transition in In3SbTe2 allowing switchable infrared control, suggesting applications in thermal radiation management.
Two types of devices capable of switchable infrared spectral control are demonstrated by utilizing the phase-change characteristics of In3SbTe2 (Indium–Antimony–Tellurium, IST), which transitions from a low-loss dielectric amorphous phase to a high-loss metallic crystalline state. Through comprehensive structural design, theoretical calculation, simulation analysis, experimental measurement, and application demonstration, we realize distinct switching effects and functions of these two devices. In the first design, IST mono-layer thin films integrated with infrared-transparent substrates (KBr and ZnSe) enable switching between amorphous high transmittance and crystalline high reflectance states over the 2.5–15 μm range, suitable for infrared optical switches and stealth applications. In the second design, introducing a Si metasurface disk array atop the IST mono-layer thin film enables switching between broadband infrared transparency and narrowband high emissivity. This configuration allows independent spectral control of the infrared spectra within the non-atmospheric (5–8 μm) and atmospheric (8–14 μm) windows, providing a versatile platform for tunable thermal radiation management and adaptive infrared camouflage.
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Lin et al. (2025) studied this question.
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