Plasmonic Characteristics of TiN Layers Deposited by ECWR Assisted MF Magnetron Sputtering

This study investigates the plasmonic properties of TiN thin films deposited by pulsed mid‐frequency reactive magnetron sputtering combined with RF inductively coupled plasma in a DC magnetic field and electron cyclotron wave resonance (ECWR). The substrate was grounded while the plasma potential was tuned by applying a positive DC bias from 0 to 120 V to the ECWR coil relative to ground. Raising the DC bias increased the plasma potential and thus accelerated ions to energies corresponding to that potential, producing energetic ion bombardment of the grounded substrate. The principal benefit of adding ECWR plasma and a DC bias is an increased degree of ionization in the reactive plasma. Consequently, the resulting denser plasma and enhanced N 2 dissociation improve the internal structure of the deposited films even at low substrate temperatures.