Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle

In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N⁺/P⁺/N⁺ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells.