High-Performance p-Cu2O/n-β-Ga2O3 Heterojunction Barrier Schottky Diodes with Copper Contact

This study demonstrates the fabrication of high-performance p-Cu2O/n-β-Ga2O3 heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu2O spacing to 4 μm, the device achieves a turn-on voltage of 0.78 V, a breakdown voltage of 1700 V, and a specific on-resistance of 5.91 mΩ·cm2, yielding a power figure of merit of 0.49 GW/cm2. The JBS diode also exhibits stable electrical characteristics across the temperature range of 300–425 K. Under a 200 V reverse stress for 5000 s, the JBS diode shows only a 4.16% degradation in turn-on voltage and a 1.15-fold increase in dynamic specific on-resistance variation, highlighting its excellent resistance to stress-induced degradation. These results indicate that Cu2O/Ga2O3 JBS diodes are promising candidates for next-generation high-efficiency and high-voltage power electronic applications.