Analysis shows significant improvements in memory retention and plasticity in neuromorphic computing devices with temperature modulation.
Stretchable synaptic transistors are promising candidates for brain-inspired neuromorphic systems in soft robotics and wearable electronics, where temperature perception and low-power operation are critical for biological fidelity and energy efficiency. However, the interplay between mechanical strain, temperature perception, and synaptic properties remains underexplored in such devices. Here, we report a high-density, temperature-modulated stretchable synaptic transistor (TM-SST) array fabricated via a photolithography-based, transfer-free process, integrating a semiconductor carbon nanotube (s-CNT) network channel and an SU-8 dielectric layer. The devices exhibit a high on-off ratio (∼10⁵) at a low gate voltage (Vgs) between ±2.5 V and a drain-to-source voltage (Vds) of -0.1 V. Importantly, the devices exhibit temperature-dependent synaptic characteristics across 10-40 °C, with effective modulation of postsynaptic current (PSC), plasticity, memory retention, and paired-pulse facilitation (PPF), while maintaining stable performance under 40% strain. Furthermore, temperature modulation enhances neuromorphic performance: a 15 °C cooling improves memory retention in associative learning from seconds to minutes, while simulations show accelerated learning with a 10× dynamic range. This work advances stretchable synaptic devices by enabling temperature perception to enhance neuromorphic functionality.
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Zhao et al. (2025) studied this question.
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