Water-assisted chemical vapor deposition grows controlled-layer WTe₂, suggesting novel optoelectronic applications.
The Td phase of tungsten ditelluride (WTe₂), a noncentrosymmetric transition metal dichalcogenide, hosts rich correlated phenomena, topological states, and nonlinear transport responses. However, the scalable synthesis of high-quality few-layer WTe₂ with precise layer control remains challenging. Here, we report a water-assisted chemical vapor deposition approach that deterministically grows monolayer to trilayer Td-WTe₂ with controlled flake size and density. Moisture-mediated precursor liquefaction through salt-assisted intermediates enables vapor-liquid-solid growth and tunable layer numbers through a concerted layer growth mode. Transport studies reveal that trilayer WTe₂ exhibits a nonlinear Hall effect susceptibility of 1.1 μm·V⁻¹ at 10 K and 0.5 μm·V⁻¹ at 50 K, nearly an order of magnitude higher than that in bilayers, consistent with the calculated Berry curvature dipole enhancement. Layer-dependent microwave rectification further highlights the influence of topological band structure and interlayer coupling. These results establish layer-engineered Td-WTe₂ as a promising platform for nonlinear quantum transport and high-frequency optoelectronic applications.
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Wu et al. (2025) studied this question.
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