Microstructural investigation of ZnTe thin films prepared via pulsed laser deposition (PLD) technique

ZnTe thin films were grown by pulsed-laser deposition (PLD) and characterised by SEM and EDS. SEM revealed a dominant nanoscale grain population (median ≈ 26 nm, mean ≈ 33 nm) with occasional coalesced grains at the sub-micron level, indicating a largely uniform morphology suitable for optoelectronic transport. Quantitative EDS confirmed Zn and Te as the only detectable elements; Te-rich compositions (≈ Te 74.% vs Zn 26 %) point to intrinsic acceptor-type defects (Te interstitials/Te-related antisites), consistent with p-type behaviour reported for ZnTe. The microstructural observations suggest that further optimisation of PLD parameters (laser fluence and deposition rate) can suppress rare grain coalescence and narrow the size distribution. The achieved purity and nanoscale texture highlight the promise of PLD-grown ZnTe as a window/buffer layer and as a p-type absorber partner in thin-film photovoltaic and photodetector devices.