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November 24, 2025Nano Letters

Layer-Dependent Asymmetric Dipoles Induced Formation of Atomically Thin p–n Junctions

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Authors

CPChengfeng PanTokyo Institute of TechnologyJLJin LvTaiyuan Normal UniversityDSDazhong SunChongqing University

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Overview

Theoretical study demonstrates self-doped pn junction formation in polarized 2D semiconductors via asymmetric dipoles, highlighting a universal route to advance atomically thin electronics.

Key Points

  • Atomically thin pn junctions form in two-dimensional polarized semiconductors via layer-dependent asymmetric dipoles, overcoming the limits of bulk doping strategies.
  • Theoretical model of a sandwich structure demonstrates selective electron and hole injection when the metal work function falls between opposing surface work functions.
  • May enable versatile two-dimensional electronics in the post-Moore era, as increasing the number of polarized layers tunes work function disparity to expand electrode choice.

Cite This Study

Pan et al. (2025) studied this question.

synapsesocial.com/papers/69403b952d562116f290c623https://doi.org/10.1021/acs.nanolett.5c04803
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