What question did this study set out to answer?

To study the epitaxial configuration of MoS2 monolayer on sapphire.

January 14, 2026Journal of Applied Physics0 citationsOpen Access

Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire

AOAkihiro OhtakeNational Institute for Materials Science JNJun NaraNational Institute for Materials Science YSYoshiki SakumaNational Institute for Materials Science

Key Points

To study the epitaxial configuration of MoS2 monolayer on sapphire.
Grown MoS2 monolayer using metal-organic chemical vapor deposition
Characterized using low-energy electron diffraction
Analyzed through first-principles calculations
Identified epitaxial relationship of MoS2 [112¯0] // Al2O3 [112¯0]
Found MoS2 [11¯00] // Al2O3 [11¯00] relationship
Demonstrated suppression of antiparallel inversion domains

Abstract

Highly oriented MoS2 monolayer (ML) on the sapphire(0001) substrate was grown by metal-organic chemical vapor deposition. The epitaxial configuration of ML-MoS2/sapphire has been studied using low-energy electron diffraction (LEED) combined with first-principles calculations. LEED analysis based on the dynamical diffraction theory revealed that the MoS2 ML is grown with the epitaxial relationship of MoS2 112¯0 // Al2O3 112¯0 and MoS2 11¯00 // Al2O3 11¯00 and that the formation of antiparallel (inversion) domains is effectively suppressed. The observed epitaxial relationship is insensitive to the direction of surface steps on the sapphire substrate.

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