Enhancing proton irradiation tolerance of a-IGZO thin-film transistors through hydrogen doping

Key Points

• Investigate how hydrogen doping affects the radiation tolerance of a-IGZO thin-film transistors (TFTs).
• Utilized hydrogen doping techniques on a-IGZO TFTs.
• Assessed effects on oxygen vacancies and carrier compensation.
• Evaluated performance under high-energy proton irradiation.
• Hydrogen doping significantly suppressed oxygen vacancies.
• This process compensated for excess carriers, enhancing stability.
• Doped TFTs demonstrated improved operational resilience under proton irradiation.