Charge Transfer Doping Enabled High-Performance Deep-Ultraviolet Photodetectors Based on CuI/β-Ga 2 O 3 Heterostructures for Deep-Ultraviolet Optical Communication

Key Points

• This research aims to improve the performance of DUV photodetectors by utilizing charge transfer doping in semiconductor heterostructures.
• Developed self-driven DUV photodetectors using CuI/β-Ga2O3 heterostructures.
• Applied charge transfer doping to enhance photodetection performance.
• Analyzed the performance metrics of the photodetectors under DUV light.
• Significant improvement in photodetection efficiency observed with charge transfer doping.
• Demonstrated effectiveness of the CuI/β-Ga2O3 combination for DUV applications.
• Potential applications in deep-ultraviolet optical communication highlighted.