What question did this study set out to answer?

The aim is to improve the performance of artificial neural networks using advanced synaptic transistors.

January 21, 2026Journal of Materials Chemistry C0 citations

Floating-gate synaptic transistors with bending resistance and strong charge storage capability via interfacial redispersion and reconfiguration

XFXiao FuGuangdong Food and Drug Vocational College WWWeijin Wu ZLZhihao LiangSouth China University of Technology

Key Points

The aim is to improve the performance of artificial neural networks using advanced synaptic transistors.
Development of floating-gate synaptic transistors
Enhancements in bending resistance
Implementation of interfacial redispersion and reconfiguration techniques
Significant improvement in charge storage capability
Enhanced durability under bending conditions
Potential applications in neuromorphic devices for artificial intelligence

Abstract

The development of artificial neural networks based on neuromorphic devices is expected to break through the von Neumann bottleneck and promote the further development of artificial intelligence technology.

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