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January 22, 2026Advanced Energy Materials2 citations

Anisotropic Strain‐Induced Centrosymmetry Breaking in Cubic Formamidinium Lead Iodide (α‐FAPbI 3 ) Thin Films

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HJHyeon Jun JeongBKBo‐Hyun KimRNRyosuke Nishikubo

Key Points

  • The research aims to investigate the mechanisms behind centrosymmetry breaking in α-FAPbI3 thin films induced by anisotropic strain.
  • Used circular polarization-dependent pump-probe transient absorption spectroscopy to analyze band splitting.
  • Employed angle-dependent X-ray diffraction and photoluminescence to assess residual stress in films.
  • Conducted time-resolved photoluminescence and microwave conductivity measurements to study carrier dynamics.
  • Observed Rashba-type band splitting exclusively in preferentially oriented thin films (POF).
  • Found significant residual stress in POF compared to randomly oriented films (ROF), indicating lattice distortion.
  • Revealed inhomogeneous carrier dynamics and higher anisotropic charge carrier mobility due to strain effects.

Abstract

ABSTRACT Organic–inorganic halide perovskites have emerged as promising materials for next‐generation optoelectronic devices due to their exceptional photophysical properties. Among them, α‐formamidinium lead tri‐iodide (α‐FAPbI 3 ) with a cubic symmetry (space group of ) has garnered attention as a potential absorber in solar cells for its narrow bandgap and superior stability. The fundamental mechanisms governing its high performance have yet to be fully elucidated. In this study, we demonstrate that centrosymmetry breaking in 001 preferentially oriented α‐FAPbI 3 thin films (POF) arises from inevitable anisotropic strain during film formation. Using circular polarization‐dependent pump‐probe transient absorption spectroscopy, we observe Rashba‐type band splitting exclusively in POF, indicating symmetry breaking. Angle‐dependent X‐ray diffraction and photoluminescence (PL) reveal significant residual stress in POF compared to randomly oriented films (ROF), confirming strain‐induced lattice distortion. Furthermore, time‐resolved PL and microwave conductivity measurements reveal top‐back inhomogeneous carrier dynamics and anisotropic charge carrier mobility, supporting the presence of the anisotropic strain‐induced symmetry breaking. Our findings provide direct experimental evidence that inevitable strain in POF induces static Rashba effects, offering new insights into strain engineering for high‐performance perovskite optoelectronics and potential quantum applications.

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Cite This Study

Jeong et al. (2026) studied this question.

synapsesocial.com/papers/6971bfdff17b5dc6da021f28https://doi.org/10.1002/aenm.202506280
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

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