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January 22, 2026Applied Physics LettersOpen Access

Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution

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Authors

YCYuke CaoCYChao YuanAHAustin Hickman

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Overview

Characterization reveals 2DHG conduction affecting leakage in AlN/GaN/AlN HEMTs, suggesting better design strategies.

Key Points

  • The study aims to investigate the conduction mechanisms of 2DHG in AlN/GaN/AlN HEMTs and their impact on leakage.
  • Used electrical characterization techniques
  • Applied electric-field-induced second harmonic generation
  • Etched heterostructures to isolate the 2DEG channel
  • Developed an equivalent circuit model
  • Demonstrated parallel conduction of 2DHG with 2DEG in HEMTs
  • Identified leakage paths caused by Fowler–Nordheim tunneling
  • Estimated 2DHG sheet resistance at 10 MΩ/sq
  • Measured vertical resistance between 2DHG and n++GaN at 35 MΩ mm

Cite This Study

Cao et al. (2026) studied this question.

synapsesocial.com/papers/6971bfdff17b5dc6da021fc1https://doi.org/10.1063/5.0310993
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