Progress in nickel oxide semiconductors for quantum dot-based electroluminescent devices

Shanfeng Xu; Miaoning Liu; Bo Li; Fensha Cai; Shan Pang; Xiaohong Jiang; Zuliang Du

doi:10.1039/d5tc03863d

January 1, 2026Journal of Materials Chemistry C

Progress in nickel oxide semiconductors for quantum dot-based electroluminescent devices

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Key Points

To investigate the potential of nickel oxide as a p-type material for quantum dot light-emitting diodes (QLEDs).
Review of recent advancements in nickel oxide synthesis and optimization.
Evaluation of nickel oxide's performance as a hole injection material in QLEDs.
Analysis of device integration techniques for improved efficiency.
Nickel oxide demonstrates stability and effectiveness as a p-type semiconductor.
Improvements in synthesis methods have led to better device performance.
Optimized integration strategies show potential for commercial QLED applications.

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Implication

This review explores nickel oxide's role in enhancing quantum dot electroluminescent devices, suggesting significant potential for commercial applications.

Abstract

This review examines nickel oxide (NiO x ) as a stable p-type hole injection/transport material for QLEDs, summarizing advances in synthesis, optimization, and device integration that enable the development of efficient, commercial QLEDs.

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Xu et al. (2026) studied this question.

synapsesocial.com/papers/697461a8bb9d90c67120b800 https://doi.org/10.1039/d5tc03863d

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Progress in nickel oxide semiconductors for quantum dot-based electroluminescent devices

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Abstract

Discussion

Cite This Study

Progress in nickel oxide semiconductors for quantum dot-based electroluminescent devices

Key Points

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Abstract

Discussion

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