Simulation shows enhanced quantum photon pairs generation in GaAs metasurfaces, indicating strong potential for photonics applications.
Metasurfaces supporting high quality factor resonances have shown the ability to enhance spontaneous parametric down-conversion (SPDC) process and are therefore seen as a promising platform for entangled quantum photon pair generation. We propose a high quality (Q) factor flat-band optical metasurface for efficient quantum light generation via SPDC. The structure consisting of periodic GaAs nano-resonators on SiO2 was numerically optimised to realise a metasurface that is dispersionless along the Γ–Y axis near the telecommunications band (∼1550 nm). Our simulations show that the metasurface hosts two quasi–bound-states-in-the-continuum (q-BIC) modes with quality factors exceeding 109; the intentional merging of the BICs results in high-Q (>105) across a finite in-plane wave-vector range. This combination of angle-independent resonance frequency with persistently high Q mitigates the off-Γ degradation typical of symmetry-broken q-BICs. The design increases the optical density of states and allows for efficient collection of the generated photons using a high numerical aperture. It is anticipated that the resulting devices could be used for both quantum photon pair generation and for classical nonlinear second-harmonic generation. Our results demonstrate flat-band, high-Q metasurfaces that can be fabricated as a compact route to on-chip nonlinear and quantum photonics.
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Wu et al. (2026) studied this question.
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