Vacuum-Processed Hybrid Resists for Advanced Lithography: Molecular Layer Deposition and Sequential Infiltration Synthesis

Jihyun Jung; Raehyeon Park; Nari Jeon

doi:10.1039/d5nr04721h

January 1, 2026Nanoscale

Vacuum-Processed Hybrid Resists for Advanced Lithography: Molecular Layer Deposition and Sequential Infiltration Synthesis

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Key Points

The aim is to develop hybrid resist materials that enhance performance in EUV lithography.
Utilized molecular layer deposition to create resist structures.
Applied sequential infiltration synthesis for improved material properties.
Evaluated the photon absorption cross-sections of developed resists.
Hybrid resists showed improved photon absorption compared to conventional materials.
Achieved higher resolution in lithographic patterns with the new techniques.
Demonstrated effective performance under EUV exposure conditions.

Implication

Demonstrates advanced photoresist development for EUV lithography, indicating potential for improved resolution and performance.

Abstract

Under next-generation extreme ultraviolet (EUV, 13.5 nm) lithography, conventional organic photoresists face inherent limitations due to their small photon absorption cross-sections, making it difficult to simultaneously achieve high resolution, low...

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Cite This Study

Jung et al. (2026) studied this question.

synapsesocial.com/papers/697703af722626c4468e8c71 https://doi.org/10.1039/d5nr04721h

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Vacuum-Processed Hybrid Resists for Advanced Lithography: Molecular Layer Deposition and Sequential Infiltration Synthesis

Key Points

Implication

Abstract

Discussion

Cite This Study

Vacuum-Processed Hybrid Resists for Advanced Lithography: Molecular Layer Deposition and Sequential Infiltration Synthesis

Key Points

Implication

Abstract

Discussion

Cite This Study

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