ABSTRACT Rechargeable aqueous zinc‐ion batteries (ZIBs) have received significant attention because of their high safety and low cost. MnO 2 as a cathode material hampers the application of ZIBs due to its structural instability and dissolution during the operation of the battery. In this work, gallium (Ga) is successfully doped into the crystal structure of α‐MnO 2 , which effectively stabilizes the tunneling structure of MnO 2 and improves the conductivity of the bulk material. The Ga doping reduces the coordination numbers of Mn–O, Mn–Mn edge , and Mn–Mn corner shells to 4.4, 4.0, and 0.3, respectively, promoting the formation of Mn and O vacancies in the Ga@MnO 2 material. Electrochemical charge/discharge processes show that Ga doping remarkably improves the transport rates of Zn 2+ and H + , whereas the reaction products have an enhanced reversibility of deposition/dissolution. Therefore, the Ga@MnO 2 cathode provides a capacity up to 352.7 mAh g −1 at 0.1 A g −1 and maintains a discharge capacity of 125.2 mAh g −1 even after 1500 cycles at 2 A g −1 . Our work demonstrates that Ga doping is a facile strategy for enhancing the electrochemical performance of α‐MnO 2 by modifying the local structure, paving a way for further application of ZIBs.
Xu et al. (Sun,) studied this question.
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