Copper indium gallium selenide (CIGS)‐based thin‐film solar cells continue to exhibit performance constraints associated with carrier recombination, incomplete spectral utilization, parasitic ultraviolet (UV) absorption in the window layers, and losses induced by nonideal series and shunt resistances. To overcome these limitations, this study proposes a hybrid CIGS/ASnI 2 Br architecture engineered to enhance charge transport, extend spectral response, and mitigate resistive losses. Using Solar Cell Capacitance Simulator‐1D simulations, we systematically investigate the effects of ASnI 2 Br absorber thickness, acceptor concentration, parasitic resistances ( R s and R sh ), wavelength filtering, and operating temperature on the photovoltaic behavior of the device. The optimized configuration, incorporating a 0.1 µm ASnI 2 Br layer with a doping concentration of 10 12 –10 15 cm −3 , achieves = 0.747 V, = 34.478 mA/cm 2 , = 79.16%, and an efficiency of 20.40% at 10 12 cm −3 . A reduction in series resistance and an increase in shunt resistance are shown to significantly improve the fill factor and suppress recombination‐driven power losses, thereby confirming the sensitivity of the hybrid design to resistive effects. Additionally, integrating a dark‐red optical filter (700 nm) effectively suppresses UV‐induced parasitic absorption, enhancing the device efficiency to 31.26%. Temperature‐dependent simulations (260–340 K) further demonstrate stable photovoltaic performance, validating the thermal robustness of the proposed structure. Overall, this work provides new theoretical insights into hybrid chalcopyrite–halide absorber integration and identifies key resistive and optical parameters governing performance enhancement. The findings offer clear guidelines for experimental realization and highlight a promising pathway toward next‐generation, high‐efficiency, and cost‐effective thin‐film photovoltaic technologies.
Allam et al. (Thu,) studied this question.