To investigate the Mie scattering effects in silicon-embedded germanium quantum dot arrays using Raman analysis.
Conducted experiments on SiGe quantum dot/Silicon Nitride micro-disk arrays
Applied Raman analysis to examine electromagnetic patterns
Measured near-field intensity enhancements in the samples
Demonstrated the significant enhancement of near-field intensity due to Mie scattering
Provided evidence of observable Mie scattering effects in the tested quantum dot arrays
Abstract
We reported experimental observation of Mie scattering effects of Si embedded Ge quantum dot (QD)/SiN micro-disk arrays as a result of a significant enhancement in the electromagenatic near-field intensity.