Group-IV materials constitute the foundational platform for advancing silicon-based photonics, spintronic, and energy technologies.1 Recent breakthrough in the field includes the demonstration of continues-wave electrically pumped lasing based on advanced (Si)GeSn/GeSn MQWs.2 Theoretical calculations predicts that the C substitution into Ge lattice even enhance the directness of band gap leading to laser performance improvement.3 In this study, we address the growth aspects of ternary and quaternary Group-IV alloys, in comparison with GeSn epitaxy, which serve as benchmark. Additionally, an unconventional carbon precursor - CBr4 is introduced and its chemical influence on onset Sn alloying for CGeSn alloys is presented. Later, the Si induce defect engineering to compensate the effect of C alloying on strain relaxation in diamond cubic lattice during (Si)GeSn epitaxy is studied.
Devaiya et al. (Wed,) studied this question.
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