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This research aims to investigate the lasing performance of GeSn multi-quantum wells on different platforms and the effect of lattice strain.

GeSn Quantum Wells for Room‐Temperature Mid‐Infrared Lasing on Si and on Insulator Platforms

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This research aims to investigate the lasing performance of GeSn multi-quantum wells on different platforms and the effect of lattice strain.
Developed GeSn MQW heterostructures with approximately 15 at.% Sn.
Compared performance on GeSn on-Si and GeSn-on-insulator platforms.
Engineered lattice strain from compressive to tensile.
GeSn-on-insulator platform achieved laser emission at room temperature (293 K) with a threshold of 500 kW cm−2.
Tensile-strained GeSn exhibited a lower threshold of 8 kW cm−2 at 77 K but only maintained emission up to 265 K.
Demonstrated GeSn MQWs as a viable gain medium for mid-infrared lasing applications.

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Randomized trial reveals mid-infrared lasing performance of GeSn on distinct platforms, suggesting integration potential with CMOS technology.

Meyer et al. (2026) studied this question.

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Randomized trial reveals mid-infrared lasing performance of GeSn on distinct platforms, suggesting integration potential with CMOS technology.