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This study investigates the optoelectronic properties of p-type/intrinsic/n-type diodes based on α-Sn/Ge multi-quantum wells.

February 2, 2026Advanced Optical MaterialsOpen Access

Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi‐Quantum Wells

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This study investigates the optoelectronic properties of p-type/intrinsic/n-type diodes based on α-Sn/Ge multi-quantum wells.
Utilized molecular beam epitaxy to grow ultrathin α-Sn/Ge multiple quantum well structures.
Conducted structural analysis to assess crystalline quality and interface definition.
Performed room-temperature electroluminescence measurements to identify energy transitions.
Theoretical modeling was used to predict energy shifts related to barrier thickness.
Identified two direct emission transitions in electroluminescence measurements.
Higher-energy emission linked to direct radiative recombination in intrinsic Ge.
Lower-energy peak corresponds to weakly quantum-confined states affected by barrier thickness.
Observed clear signatures of the Franz–Keldysh effect in photodetector operation.

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Implication

Experimental and theoretical work demonstrates optoelectronic properties of Sn/Ge multi-quantum wells, indicating their potential in advanced devices.

Cite This Study

Oehme et al. (2026) studied this question.

synapsesocial.com/papers/6980fc17c1c9540dea80dd84 https://doi.org/10.1002/adom.202503561

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Implication

Experimental and theoretical work demonstrates optoelectronic properties of Sn/Ge multi-quantum wells, indicating their potential in advanced devices.

Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi‐Quantum Wells

Key Points

Discussion

Implication

Cite This Study

Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi‐Quantum Wells

Key Points

Discussion

Implication

Cite This Study

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