Simulating the Hubbard model with moiré semiconductors

Kin Fai Mak; Jie Shan

doi:10.1093/nsr/nwag069

January 31, 2026National Science ReviewOpen Access

Simulating the Hubbard model with moiré semiconductors

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Key Points

This research aims to explore the capabilities of moiré semiconductors as simulators for the Hubbard model.
Utilized moiré semiconductors to create models resembling triangular and honeycomb lattices.
Manipulated the interaction-to-bandwidth ratio (U/t) to investigate phase diagrams.
Analyzed the resulting quantum states and behavior across different lattice configurations.
Demonstrated the viability of moiré semiconductors in simulating complex quantum systems.
Identified varying phase diagrams influenced by the interaction-to-bandwidth ratio.
Observed unique quantum behaviors emerging from the lattice configurations.

Implication

Simulation uncovers tunable phase diagrams in moiré semiconductors, suggesting novel quantum behaviors.

Abstract

Moiré semiconductors provide a solid-state Hubbard-model simulator, enabling triangular/honeycomb lattice realizations and tunable phase diagrams via the interaction-to-bandwidth ratio 𝑈/𝑡.

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Cite This Study

Mak et al. (2026) studied this question.

synapsesocial.com/papers/698435aaf1d9ada3c1fb4cba https://doi.org/10.1093/nsr/nwag069

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Simulating the Hubbard model with moiré semiconductors

Key Points

Implication

Abstract

Discussion

Cite This Study

Simulating the Hubbard model with moiré semiconductors

Key Points

Implication

Abstract

Discussion

Cite This Study

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