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Ionic displacement modifying the electric field in the device is found as most likely reason for the hysteresis which is examined by separating fast and slow processes and comparing devices with and without blocking layer.
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Wolfgang Tress
Computational Physics (United States)
Nevena Marinova
Tecnalia
Thomas Moehl
University of Zurich
Energy & Environmental Science
École Polytechnique Fédérale de Lausanne
University of Lausanne
Interface (United States)
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Tress et al. (Thu,) studied this question.
synapsesocial.com/papers/6985d603b4398f068586192e — DOI: https://doi.org/10.1039/c4ee03664f