Demonstrates a WO3/SiNWs sensor improving NO2 detection sensitivity at low temperatures, indicating potential for low-power applications.
Although tungsten oxide (WO3)-based NO2 sensors have been extensively studied, achieving high sensitivity at low operating temperatures remains a significant challenge. To address this limitation, we designed a WO3/SiNWs heterojunction-based sensor, fabricated through metal-assisted chemical etching followed by hydrothermal synthesis. Structural and morphological analyses confirm the uniform integration of WO3 nanorods onto SiNWs and the establishment of an effective p–n junction. The optimized sensor exhibits a response of 238 toward 1 ppm NO2 at 127 °C with a response/recovery times of 14.8 s/99.2 s. The improved performance stems from the heterojunction-driven enhancement of charge carrier separation and surface adsorption sites, offering a viable route for developing low-power, high-performance gas sensors.
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Sun et al. (2026) studied this question.
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