Charge density wave (CDW), which typically opens a narrow energy gap near the Fermi level, is highly sensitive to low-energy photon excitations, providing a compelling basis for infrared detectors. Here, we systematically investigated one-dimensional (1D) NbTe 4 and TaTe 4 , as well as two-dimensional (2D) NbTe 2 and TaTe 2 , from the binary Nb/Ta - Te systems for mid- and long-wave infrared detection. They all exhibit notable infrared photoresponse under zero-bias (self-powered) operation governed by the photothermoelectric effect. NbTe 2 , in particular, achieves detectivities of 1.64×10 8 and 1.29×10 8 Jones under illumination of 4 μm and 8.47 μm infrared lights, respectively. Using artificial intelligence, super-resolution reconstruction was realized to enhance images obtained from photodetector-based single-pixel imaging, laying an important foundation for computing-in-memory integration. This work highlights Nb/Ta - Te phases as promising candidates for infrared detectors, paving the way for next-generation room-temperature, low-power intelligent infrared optoelectronic systems.
Gu et al. (Sun,) studied this question.
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