Raman scattering investigates charge density wave states in NbTe4, suggesting relevance for memory devices.
Charge density waves (CDWs) are ordered quantum states of conduction electrons accompanied by periodic lattice distortions. Raman scattering (RS) spectroscopy is, therefore, well suited for probing CDW-induced structural modulations. The CDW state in quasi-one-dimensional NbTe4 is investigated using RS spectroscopy. At T = 5 K, the resonantly enhanced Raman spectrum exhibits 25 phonon modes. Polarization-dependent measurements reveal a strong coupling between phonon-mode symmetry and crystallographic symmetry, with modes polarized parallel or perpendicular to the crystallographic c axis, along which the one-dimensional structure is elongated. Temperature-dependent RS measurements identify a transition between commensurate and incommensurate CDW phases, accompanied by pronounced thermal hysteresis, with transition temperatures of approximately 45 K upon cooling and 90 K upon warming. The hysteresis width depends on the warming rate, indicating a finite nucleation rate of CDW domains and suggesting potential relevance for memory-device applications.
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Zawadzka et al. (2026) studied this question.
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