Demonstrates a linear photoresponse linked to domain inversion depth in ferroelectric lithium niobate, suggesting implications for memory applications.
The ferroelectric photoresponse combines photoresponse with the domain inversion dynamics, offering promising potential for applications in photodetection and nonvolatile memory. In this study, we demonstrated that the photoresponse of ferroelectric lithium niobate film exhibited a linear dependence on the depth of inverted domain, which can be attributed to the resistance change induced during the domain inversion process. Based on this, multi-level memory operation with electrical writing and optical reading was achieved, highlighting the potential for high-density nonvolatile memory applications.
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Li et al. (2026) studied this question.
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