Low-Loss Silicon Nitride Bent Waveguides at O-Band with Modified Hermite Curves

The silicon nitride (SiN) platform offers a low-loss solution for photonic integrated circuits (PICs). The bent waveguide represents one of the primary sources of propagation loss in such integrated systems. In this work, we present a comprehensive review of recent advances in SiN bent waveguide technologies. We propose a low-loss SiN bent waveguide design integrated with modified Hermite curves. We adopt a waveguide geometry of 800 nm × 300 nm in the simulations, with the material refractive index derived from the LPCVD process. Simulations conducted at a wavelength of 1311 nm reveal that the proposed bends exhibit bending losses of 0.076 dB, 0.021 dB, 0.0055 dB, and 0.0012 dB per 90° bend, corresponding to bending radii of 15 μm, 20 μm, 25 μm, and 30 μm, respectively. Furthermore, the fabrication tolerance and wavelength dependence of the proposed design are systematically investigated to verify its practical applicability.