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February 13, 2026Nano Letters

Engineering Excitonic Metal–Insulator Transitions in Ultrathin Doped Copper Sulfides

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Authors

HCHuichao ChenNingbo UniversityYLYufeng LiuShanghai Jiao Tong UniversityYJYashi JiangShanghai Jiao Tong University

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Overview

Demonstration of metallic and insulating states in ultrathin copper sulfide films, highlighting band structure tunability.

Key Points

  • To investigate the engineering of band structure in ultrathin copper sulfides and the resulting metal-insulator transitions.
  • Tuning composition of copper and sulfur in films
  • Angle-resolved photoemission spectroscopy (ARPES) for band observation
  • Scanning tunneling microscopy (STM) for electronic structure analysis
  • Low energy electron diffraction (LEED) for structural characterization
  • Distinct metallic and insulating ground states were confirmed in copper sulfide films.
  • A continuous band renormalization and full gap opening observed with increasing doping.
  • No superlattice modulation or lattice symmetry breaking noted, reinforcing the transition's electronic origin.
  • Evidence for excitonic insulating phases identified through carrier density-dependent transitions.

Cite This Study

Chen et al. (2026) studied this question.

synapsesocial.com/papers/698ebedd85a1ff6a93016237https://doi.org/10.1021/acs.nanolett.5c06126
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