Structural, morphological and optical engineering of ZnO through nickel doping for perovskite photosensor application

Nickel (Ni) modified Zinc Oxide (ZnO) nanomaterials were synthesized using sol–gel technique. The structural and morphological studies of Ni modified ZnO nanomaterials are investigated using XRD and SEM. The materials exhibit a hexagonal wurtzite structure with particle sizes in nanometer range. Optical studies, including absorption and transmission spectra, revealed an increase in band gap by increasing Ni doping in ZnO from 3.26 to 3.35 eV. Current–voltage characteristics show a decrease in carrier mobility and conductivity when increasing Ni content in ZnO. These Ni-doped ZnO thin films were investigated as electron transport layers (ETLs) in MAPbI 3 -based perovskite photodiodes. Under illumination at 465 nm with ~ 4 mW/cm² power, the maximum responsivity and detectivity for devices incorporating Zn 1-x Ni x O (x = 0.05, 0.10, 0.15) were 1.49 A/W, 1.04 A/W, 16.64 mA/W, and 5.39 × 10 11 , 3.80 × 10 11 , and 3.51 × 10 9 Jones, respectively. The low concentration Ni-doped ZnO nanomaterials emerges as potential materials for the application of perovskite MAPbI 3 photosensors.