Examines how variations in ALD conditions affect TiO2 film properties, suggesting optimization is key for performance.
Thin TiO 2 films were deposited by atomic layer deposition (ALD) at 150 and 250 °C on FTO and Si/SiO 2 substrates to examine the effect of deposition conditions on morphology, structure, chemical stability, and photoelectrochemical performance.
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Krýsová et al. (2026) studied this question.
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