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February 14, 2026Advanced Electronic MaterialsOpen Access

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn 2 Sb 2

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Authors

MXM. Y. XuMichigan State UniversityMBMatt BoswellOak Ridge National LaboratoryARAya RutherfordUniversity of Tennessee at Knoxville

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Implication

Experimental analysis reveals pressure-induced changes in magnetism and conductivity in a low-dimensional magnetic semiconductor, suggesting new quantum states.

Key Points

  • This research investigates the effects of pressure on the structural and magnetic properties of YbMn2Sb2.
  • Single-crystal X-ray diffraction to study structural changes under pressure.
  • Magnetization measurements to observe magnetic behavior up to 400 K.
  • Temperature-dependent resistivity measurements to assess electrical properties under pressure.
  • Neutron diffraction to identify magnetic structures under pressure.
  • A structural transition from P m 1 to P 2 1 / m occurs near 3.5 GPa, stable to 10 GPa.
  • Anomalously weak net magnetic moment indicates short-range magnetic order evolving into long-range order.
  • Resistivity shows semiconductor behavior with a transition at ∼119 K, but shifts to metallic-like under pressure beyond 5 GPa.
  • Density functional theory calculations confirm closing of the band gap under compression.

Cite This Study

Xu et al. (2026) studied this question.

synapsesocial.com/papers/699011a12ccff479cfe586d7https://doi.org/10.1002/aelm.202500820
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